DETAILS, FICTION AND BARE DIE SILICON CARBIDE SCHOTTKY DIODES

Studies can be found in the literature pertaining into the electrical Houses of various metallization strategies for that development of Schottky contacts to 4H-SiC and the carrier transportation in these interfaces so as to obtain minimal barrier top, bringing about a reduction of conduction losses in 4H-SiC Schottky diodes. All over again, metals